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| Datasheet | PHKD6N02LT,518 |
| File Size | 743.74 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHKD6N02LT,518 |
| Description | MOSFET 2N-CH 20V 10.9A SOT96-1 |
PHKD6N02LT,518 - Nexperia
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PHKD6N02LT,518 | Nexperia | MOSFET 2N-CH 20V 10.9A SOT96-1 | 352 More on Order |
URL Link
www.oemstron.com/datasheet/PHKD6N02LT,518
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10.9A Rds On (Max) @ Id, Vgs 20mOhm @ 3A, 5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V Power - Max 4.17W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |