Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PHM30NQ10T,518 |
| File Size | 275.61 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHM30NQ10T,518 |
| Description | MOSFET N-CH 100V 37.6A 8HVSON |
PHM30NQ10T,518 - NXP
The Products You May Be Interested In
 |
PHM30NQ10T,518 | NXP | MOSFET N-CH 100V 37.6A 8HVSON | 388 More on Order |
URL Link
www.oemstron.com/datasheet/PHM30NQ10T,518
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 37.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (6x5) Package / Case 8-VDFN Exposed Pad |