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| Datasheet | PHN210,118 |
| File Size | 208.8 KB |
| Total Pages | 8 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHN210,118 |
| Description | MOSFET 2N-CH 30V 8SOIC |
PHN210,118 - NXP
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PHN210,118 | NXP | MOSFET 2N-CH 30V 8SOIC | 348 More on Order |
URL Link
www.oemstron.com/datasheet/PHN210,118
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 20V Power - Max 2W Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |