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| Datasheet | PHT8N06LT,135 |
| File Size | 166.86 KB |
| Total Pages | 10 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHT8N06LT,135 |
| Description | MOSFET N-CH 55V 3.5A SOT223 |
PHT8N06LT,135 - NXP
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PHT8N06LT,135 | NXP | MOSFET N-CH 55V 3.5A SOT223 | 332 More on Order |
URL Link
www.oemstron.com/datasheet/PHT8N06LT,135
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 5V Vgs (Max) ±13V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |