Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

PHW80NQ10T Datasheet

PHW80NQ10T,127 Cover
DatasheetPHW80NQ10T,127
File Size96.65 KB
Total Pages7
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHW80NQ10T,127
Description MOSFET N-CH 100V 80A SOT429

PHW80NQ10T,127 - NXP

PHW80NQ10T Datasheet Page 1
PHW80NQ10T Datasheet Page 2
PHW80NQ10T Datasheet Page 3
PHW80NQ10T Datasheet Page 4
PHW80NQ10T Datasheet Page 5
PHW80NQ10T Datasheet Page 6
PHW80NQ10T Datasheet Page 7

The Products You May Be Interested In

PHW80NQ10T,127 PHW80NQ10T,127 NXP MOSFET N-CH 100V 80A SOT429 129

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4720pF @ 25V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3