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| Datasheet | PMDPB28UN,115 |
| File Size | 965.07 KB |
| Total Pages | 16 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMDPB28UN,115 |
| Description | MOSFET 2N-CH 20V 4.6A HUSON6 |
PMDPB28UN,115 - NXP
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PMDPB28UN,115 | NXP | MOSFET 2N-CH 20V 4.6A HUSON6 | 262 More on Order |
URL Link
www.oemstron.com/datasheet/PMDPB28UN,115
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Manufacturer NXP USA Inc. Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.6A Rds On (Max) @ Id, Vgs 37mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 265pF @ 10V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package DFN2020-6 |