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| Datasheet | PMDPB38UNE,115 |
| File Size | 329.99 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMDPB38UNE,115 |
| Description | MOSFET 2N-CH 20V 4A HUSON6 |
PMDPB38UNE,115 - NXP
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PMDPB38UNE,115 | NXP | MOSFET 2N-CH 20V 4A HUSON6 | 357 More on Order |
URL Link
www.oemstron.com/datasheet/PMDPB38UNE,115
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Manufacturer NXP USA Inc. Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 268pF @ 10V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package DFN2020-6 |