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| Datasheet | PMDPB58UPE,115 |
| File Size | 702.24 KB |
| Total Pages | 14 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMDPB58UPE,115 |
| Description | MOSFET 2P-CH 20V 3.6A HUSON6 |
PMDPB58UPE,115 - Nexperia
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PMDPB58UPE,115 | Nexperia | MOSFET 2P-CH 20V 3.6A HUSON6 | 11279 More on Order |
URL Link
www.oemstron.com/datasheet/PMDPB58UPE,115
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Manufacturer Nexperia USA Inc. Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.6A Rds On (Max) @ Id, Vgs 67mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 804pF @ 10V Power - Max 515mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package 6-HUSON-EP (2x2) |