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| Datasheet | PMDT290UCE,115 |
| File Size | 1,072.4 KB |
| Total Pages | 20 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMDT290UCE,115 |
| Description | MOSFET N/P-CH 20V SOT666 |
PMDT290UCE,115 - Nexperia
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PMDT290UCE,115 | Nexperia | MOSFET N/P-CH 20V SOT666 | 57492 More on Order |
URL Link
www.oemstron.com/datasheet/PMDT290UCE,115
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 800mA, 550mA Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666 |