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| Datasheet | PMEG6010AESBYL |
| File Size | 693.03 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMEG6010AESBYL |
| Description | DIODE SCHOTTKY 60V 1A DSN1006-2 |
PMEG6010AESBYL - Nexperia
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PMEG6010AESBYL | Nexperia | DIODE SCHOTTKY 60V 1A DSN1006-2 | 12501 More on Order |
URL Link
www.oemstron.com/datasheet/PMEG6010AESBYL
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Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 625mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.4ns Current - Reverse Leakage @ Vr 650µA @ 60V Capacitance @ Vr, F 20pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case 2-XDFN Supplier Device Package DSN1006-2 Operating Temperature - Junction 150°C (Max) |