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| Datasheet | PMG45UN,115 |
| File Size | 317.94 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMG45UN,115 |
| Description | MOSFET N-CH 20V 3A SOT363 |
PMG45UN,115 - NXP
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PMG45UN,115 | NXP | MOSFET N-CH 20V 3A SOT363 | 304 More on Order |
URL Link
www.oemstron.com/datasheet/PMG45UN,115
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 55mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 184pF @ 10V FET Feature - Power Dissipation (Max) 375mW (Ta), 4.35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSSOP Package / Case 6-TSSOP, SC-88, SOT-363 |