Datasheet | PMG85XPH |
File Size | 1,453.87 KB |
Total Pages | 16 |
Manufacturer | Nexperia |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | PMG85XPH, PMG85XP,115 |
Description | MOSFET P-CH 20V 2A SOT363, MOSFET P-CH 20V 2A 6TSSOP |
PMG85XPH - Nexperia
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PMG85XPH | Nexperia | MOSFET P-CH 20V 2A SOT363 | 420 More on Order |
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Nexperia Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 115mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 10V FET Feature - Power Dissipation (Max) 375mW (Ta), 2.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSSOP Package / Case 6-TSSOP, SC-88, SOT-363 |
Nexperia Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 115mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 10V FET Feature - Power Dissipation (Max) 375mW (Ta), 2.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSSOP Package / Case 6-TSSOP, SC-88, SOT-363 |