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| Datasheet | PMK35EP,518 |
| File Size | 864.24 KB |
| Total Pages | 12 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMK35EP,518 |
| Description | MOSFET P-CH 30V 14.9A 8-SOIC |
PMK35EP,518 - Nexperia
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PMK35EP,518 | Nexperia | MOSFET P-CH 30V 14.9A 8-SOIC | 394 More on Order |
URL Link
www.oemstron.com/datasheet/PMK35EP,518
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 6.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |