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Datasheet | PMN45EN,165 |
File Size | 329 KB |
Total Pages | 13 |
Manufacturer | NXP |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | PMN45EN,165, PMN45EN,135 |
Description | MOSFET N-CH 30V 5.2A 6TSOP, MOSFET N-CH 30V 5.2A 6TSOP |
PMN45EN,165 - NXP
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The Products You May Be Interested In
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PMN45EN,165 | NXP | MOSFET N-CH 30V 5.2A 6TSOP | 382 More on Order |
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PMN45EN,135 | Nexperia | MOSFET N-CH 30V 5.2A 6TSOP | 233 More on Order |
URL Link
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 495pF @ 25V FET Feature - Power Dissipation (Max) 1.75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 495pF @ 25V FET Feature - Power Dissipation (Max) 1.75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |