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PMN49EN Datasheet

PMN49EN,165 Cover
DatasheetPMN49EN,165
File Size201.14 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMN49EN,165, PMN49EN,135
Description MOSFET N-CH 30V 4.6A 6TSOP, MOSFET N-CH 30V 4.6A 6TSOP

PMN49EN,165 - NXP

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The Products You May Be Interested In

PMN49EN,165 PMN49EN,165 NXP MOSFET N-CH 30V 4.6A 6TSOP 244

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PMN49EN,135 PMN49EN,135 NXP MOSFET N-CH 30V 4.6A 6TSOP 368

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457