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| Datasheet | PMN55ENEX |
| File Size | 271.37 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PMN55ENEX, PMN55ENEH |
| Description | MOSFET N-CH 60V 4.5A 6TSOP, PMN55ENE/SOT457/SC-74 |
PMN55ENEX - Nexperia
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 30V FET Feature - Power Dissipation (Max) 560mW (Ta), 6.25mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 30V FET Feature - Power Dissipation (Max) 560mW (Ta), 6.25mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |