Datasheet | PMPB95ENEA/FX |
File Size | 717.1 KB |
Total Pages | 15 |
Manufacturer | Nexperia |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | PMPB95ENEA/FX, PMPB95ENEAX |
Description | MOSFET N-CH 80V 4.1A 6DFN2020MD, MOSFET N-CH 80V 2.8A SOT1220 |
PMPB95ENEA/FX - Nexperia
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PMPB95ENEA/FX | Nexperia | MOSFET N-CH 80V 4.1A 6DFN2020MD | 241 More on Order |
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PMPB95ENEAX | Nexperia | MOSFET N-CH 80V 2.8A SOT1220 | 418 More on Order |
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Nexperia Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 504pF @ 40V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-DFN2020MD (2x2) Package / Case 6-UDFN Exposed Pad |
Nexperia Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 504pF @ 40V FET Feature - Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020MD-6 Package / Case 6-UDFN Exposed Pad |