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| Datasheet | PMV170UN,215 |
| File Size | 198.66 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMV170UN,215 |
| Description | MOSFET N-CH 20V 1A TO-236AB |
PMV170UN,215 - NXP
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PMV170UN,215 | NXP | MOSFET N-CH 20V 1A TO-236AB | 280 More on Order |
URL Link
www.oemstron.com/datasheet/PMV170UN,215
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 165mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.65nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V FET Feature - Power Dissipation (Max) 325mW (Ta), 1.14W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |