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| Datasheet | PMV32UP,215 |
| File Size | 1,546.22 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMV32UP,215 |
| Description | MOSFET P-CH 20V 4A SOT-23 |
PMV32UP,215 - Nexperia
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PMV32UP,215 | Nexperia | MOSFET P-CH 20V 4A SOT-23 | 3881 More on Order |
URL Link
www.oemstron.com/datasheet/PMV32UP,215
|
Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 36mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 10V FET Feature - Power Dissipation (Max) 510mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |