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| Datasheet | PMV65UN,215 |
| File Size | 328.77 KB |
| Total Pages | 15 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMV65UN,215 |
| Description | MOSFET N-CH 20V 2A SOT-23 |
PMV65UN,215 - NXP
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PMV65UN,215 | NXP | MOSFET N-CH 20V 2A SOT-23 | 404 More on Order |
URL Link
www.oemstron.com/datasheet/PMV65UN,215
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 76mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 183pF @ 10V FET Feature - Power Dissipation (Max) 310mW (Ta), 2.17W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |