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| Datasheet | PMWD16UN,518 |
| File Size | 94.27 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMWD16UN,518 |
| Description | MOSFET 2N-CH 20V 9.9A 8TSSOP |
PMWD16UN,518 - NXP
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PMWD16UN,518 | NXP | MOSFET 2N-CH 20V 9.9A 8TSSOP | 439 More on Order |
URL Link
www.oemstron.com/datasheet/PMWD16UN,518
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.9A Rds On (Max) @ Id, Vgs 19mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 23.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1366pF @ 16V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |