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| Datasheet | PMXB350UPEZ |
| File Size | 722.12 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMXB350UPEZ |
| Description | MOSFET P-CH 20V 1.2A 3DFN |
PMXB350UPEZ - Nexperia
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PMXB350UPEZ | Nexperia | MOSFET P-CH 20V 1.2A 3DFN | 200 More on Order |
URL Link
www.oemstron.com/datasheet/PMXB350UPEZ
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 447mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 116pF @ 10V FET Feature - Power Dissipation (Max) 360mW (Ta), 5.68W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1010D-3 Package / Case 3-XDFN Exposed Pad |