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| Datasheet | PMXB360ENEAZ |
| File Size | 248.08 KB |
| Total Pages | 14 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMXB360ENEAZ |
| Description | MOSFET N-CH 80V 1.1A 3DFN |
PMXB360ENEAZ - Nexperia
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PMXB360ENEAZ | Nexperia | MOSFET N-CH 80V 1.1A 3DFN | 25862 More on Order |
URL Link
www.oemstron.com/datasheet/PMXB360ENEAZ
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V FET Feature - Power Dissipation (Max) 400mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1010D-3 Package / Case 3-XDFN Exposed Pad |