Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

PMZB290UNE Datasheet

PMZB290UNE,315 Cover
DatasheetPMZB290UNE,315
File Size1,554.27 KB
Total Pages15
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMZB290UNE,315, PMZB290UN,315
Description MOSFET N-CH 20V 1A DFN1006B-3, MOSFET N-CH 20V 1A 3DFN

PMZB290UNE,315 - Nexperia

PMZB290UNE Datasheet Page 1
PMZB290UNE Datasheet Page 2
PMZB290UNE Datasheet Page 3
PMZB290UNE Datasheet Page 4
PMZB290UNE Datasheet Page 5
PMZB290UNE Datasheet Page 6
PMZB290UNE Datasheet Page 7
PMZB290UNE Datasheet Page 8
PMZB290UNE Datasheet Page 9
PMZB290UNE Datasheet Page 10
PMZB290UNE Datasheet Page 11
PMZB290UNE Datasheet Page 12
PMZB290UNE Datasheet Page 13
PMZB290UNE Datasheet Page 14
PMZB290UNE Datasheet Page 15

The Products You May Be Interested In

PMZB290UNE,315 PMZB290UNE,315 Nexperia MOSFET N-CH 20V 1A DFN1006B-3 15358

More on Order

PMZB290UN,315 PMZB290UN,315 Nexperia MOSFET N-CH 20V 1A 3DFN 12628

More on Order

URL Link

PMZB290UNE,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

380mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

FET Feature

-

Power Dissipation (Max)

360mW (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

PMZB290UN,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

380mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

FET Feature

-

Power Dissipation (Max)

360mW (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN