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| Datasheet | PMZB350UPE,315 |
| File Size | 695.84 KB |
| Total Pages | 14 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMZB350UPE,315 |
| Description | MOSFET P-CH 20V 1A 3DFN |
PMZB350UPE,315 - Nexperia
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PMZB350UPE,315 | Nexperia | MOSFET P-CH 20V 1A 3DFN | 446 More on Order |
URL Link
www.oemstron.com/datasheet/PMZB350UPE,315
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 450mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 127pF @ 10V FET Feature - Power Dissipation (Max) 360mW (Ta), 3.125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006B-3 Package / Case 3-XFDFN |