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| Datasheet | PSMN005-55P,127 |
| File Size | 120.77 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PSMN005-55P,127, PSMN005-55B,118 |
| Description | MOSFET N-CH 55V 75A TO220AB, MOSFET N-CH 55V 75A D2PAK |
PSMN005-55P,127 - NXP
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 103nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 103nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |