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| Datasheet | PSMN020-150W,127 |
| File Size | 94.16 KB |
| Total Pages | 7 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PSMN020-150W,127 |
| Description | MOSFET N-CH 150V 73A SOT429 |
PSMN020-150W,127 - NXP
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PSMN020-150W,127 | NXP | MOSFET N-CH 150V 73A SOT429 | 261 More on Order |
URL Link
www.oemstron.com/datasheet/PSMN020-150W,127
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 73A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 227nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9537pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |