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| Datasheet | PSMN0R9-25YLDX |
| File Size | 726.23 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PSMN0R9-25YLDX |
| Description | PSMN0R9-25YLD/LFPAK/REEL 7 Q1 |
PSMN0R9-25YLDX - Nexperia
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URL Link
www.oemstron.com/datasheet/PSMN0R9-25YLDX
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 300A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.85mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 89.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6721pF @ 12V FET Feature - Power Dissipation (Max) 238W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |