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QH8MA3TCR Datasheet

QH8MA3TCR Cover
DatasheetQH8MA3TCR
File Size4,241.03 KB
Total Pages20
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts QH8MA3TCR
Description MOSFET N/P-CH 30V TSMT8

QH8MA3TCR - Rohm Semiconductor

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QH8MA3TCR QH8MA3TCR Rohm Semiconductor MOSFET N/P-CH 30V TSMT8 210

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QH8MA3TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7A, 5.5A

Rds On (Max) @ Id, Vgs

29mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 15V

Power - Max

1.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8