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| Datasheet | QS8M12TCR |
| File Size | 737.47 KB |
| Total Pages | 11 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | QS8M12TCR |
| Description | MOSFET N/P-CH 30V 4A TSMT8 |
QS8M12TCR - Rohm Semiconductor
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QS8M12TCR | Rohm Semiconductor | MOSFET N/P-CH 30V 4A TSMT8 | 447 More on Order |
URL Link
www.oemstron.com/datasheet/QS8M12TCR
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Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 42mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V Power - Max 1.5W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |