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QS8M13TCR Datasheet

QS8M13TCR Cover
DatasheetQS8M13TCR
File Size857.18 KB
Total Pages11
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts QS8M13TCR
Description MOSFET N/P-CH 30V 6A/5A TSMT8

QS8M13TCR - Rohm Semiconductor

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QS8M13TCR QS8M13TCR Rohm Semiconductor MOSFET N/P-CH 30V 6A/5A TSMT8 24898

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URL Link

QS8M13TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A, 5A

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 10V

Power - Max

1.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8