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QS8M51TR Datasheet

QS8M51TR Cover
DatasheetQS8M51TR
File Size3,965.02 KB
Total Pages20
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts QS8M51TR
Description MOSFET N/P-CH 100V 2A/1.5A TSMT8

QS8M51TR - Rohm Semiconductor

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QS8M51TR QS8M51TR Rohm Semiconductor MOSFET N/P-CH 100V 2A/1.5A TSMT8 4347

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URL Link

QS8M51TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A, 1.5A

Rds On (Max) @ Id, Vgs

325mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V

Power - Max

1.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8