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| Datasheet | RCX081N20 |
| File Size | 450.08 KB |
| Total Pages | 13 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RCX081N20 |
| Description | MOSFET N-CH 200V 8A TO220 |
RCX081N20 - Rohm Semiconductor
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RCX081N20 | Rohm Semiconductor | MOSFET N-CH 200V 8A TO220 | 687 More on Order |
URL Link
www.oemstron.com/datasheet/RCX081N20
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 770mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V FET Feature - Power Dissipation (Max) 2.23W (Ta), 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack |