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| Datasheet | RDD023N50TL |
| File Size | 830.08 KB |
| Total Pages | 15 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RDD023N50TL |
| Description | MOSFET N-CH 500V 2A CPT3 |
RDD023N50TL - Rohm Semiconductor
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URL Link
www.oemstron.com/datasheet/RDD023N50TL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 5.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 151pF @ 25V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |