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| Datasheet | RDN100N20FU6 |
| File Size | 85.35 KB |
| Total Pages | 5 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | RDN100N20FU6, RDN100N20 |
| Description | MOSFET N-CH 200V 10A TO-220FN, MOSFET N-CH 200V 10A TO-220FN |
RDN100N20FU6 - Rohm Semiconductor
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FN Package / Case TO-220-3 Full Pack |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FN Package / Case TO-220-3 Full Pack |