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| Datasheet | RFD4N06LSM9A |
| File Size | 350.63 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RFD4N06LSM9A |
| Description | MOSFET N-CH 60V 4A DPAK |
RFD4N06LSM9A - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/RFD4N06LSM9A
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |