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RFN1L6STE25 Datasheet

RFN1L6STE25 Cover
DatasheetRFN1L6STE25
File Size470.64 KB
Total Pages7
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RFN1L6STE25
Description DIODE GEN PURP 600V 800MA PMDS

RFN1L6STE25 - Rohm Semiconductor

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URL Link

RFN1L6STE25

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

800mA

Voltage - Forward (Vf) (Max) @ If

1.45V @ 800mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

1µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

DO-214AC, SMA

Supplier Device Package

PMDS

Operating Temperature - Junction

150°C (Max)