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RFP12N10L Datasheet

RFP12N10L Cover
DatasheetRFP12N10L
File Size535.93 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RFP12N10L
Description MOSFET N-CH 100V 12A TO-220AB

RFP12N10L - ON Semiconductor

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URL Link

RFP12N10L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

200mOhm @ 12A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3