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Datasheet | RFP2N10L |
File Size | 366.51 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | RFP2N10L |
Description | MOSFET N-CH 100V 2A TO-220AB |
RFP2N10L - ON Semiconductor
![RFP2N10L Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/rfp2n10l-0001.jpg)
![RFP2N10L Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/rfp2n10l-0002.jpg)
![RFP2N10L Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/rfp2n10l-0003.jpg)
![RFP2N10L Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/rfp2n10l-0004.jpg)
![RFP2N10L Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/rfp2n10l-0005.jpg)
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RFP2N10L | ON Semiconductor | MOSFET N-CH 100V 2A TO-220AB | 432 More on Order |
URL Link
www.oemstron.com/datasheet/RFP2N10L
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 1.05Ohm @ 2A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |