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| Datasheet | RJH65D27BDPQ-A0#T2 |
| File Size | 582.3 KB |
| Total Pages | 11 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJH65D27BDPQ-A0#T2 |
| Description | IGBT TRENCH 650V 100A TO247A |
RJH65D27BDPQ-A0#T2 - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RJH65D27BDPQ-A0#T2
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Manufacturer Renesas Electronics America Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A Power - Max 375W Switching Energy 1mJ (on), 1.5mJ (off) Input Type Standard Gate Charge 175nC Td (on/off) @ 25°C 20ns/165ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 80ns Operating Temperature 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247A |