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| Datasheet | RJK2009DPM-00#T0 |
| File Size | 86.55 KB |
| Total Pages | 7 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJK2009DPM-00#T0 |
| Description | MOSFET N-CH 200V 40A TO3PFM |
RJK2009DPM-00#T0 - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RJK2009DPM-00#T0
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 36mOhm @ 20A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-3PFM Package / Case TO-3PFM, SC-93-3 |