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| Datasheet | RJK6018DPM-00#T1 |
| File Size | 77.43 KB |
| Total Pages | 7 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJK6018DPM-00#T1 |
| Description | MOSFET N-CH 600V 30A TO3PFM |
RJK6018DPM-00#T1 - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RJK6018DPM-00#T1
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 235mOhm @ 15A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PFM Package / Case TO-3PFM, SC-93-3 |