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| Datasheet | RJK6032DPH-E0#T2 |
| File Size | 93.87 KB |
| Total Pages | 7 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJK6032DPH-E0#T2 |
| Description | MOSFET N-CH 600V 3A TO251 |
RJK6032DPH-E0#T2 - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RJK6032DPH-E0#T2
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 285pF @ 25V FET Feature - Power Dissipation (Max) 40.3W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |