Datasheet | RJK6035DPP-E0#T2 |
File Size | 81.09 KB |
Total Pages | 7 |
Manufacturer | Renesas Electronics America |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | RJK6035DPP-E0#T2 |
Description | MOSFET N-CH 600V 6A TO220 |
RJK6035DPP-E0#T2 - Renesas Electronics America
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Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.37Ohm @ 3A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 765pF @ 25V FET Feature - Power Dissipation (Max) 29.5W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |