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RN1110(T5L Datasheet

RN1110(T5L,F,T) Cover
DatasheetRN1110(T5L,F,T)
File Size307.13 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 2 part numbers
Associated Parts RN1110(T5L,F,T), RN1110CT(TPL3)
Description TRANS PREBIAS NPN 0.1W SSM, TRANS PREBIAS NPN 0.05W CST3

RN1110(T5L,F,T) - Toshiba Semiconductor and Storage

RN1110(T5L Datasheet Page 1
RN1110(T5L Datasheet Page 2
RN1110(T5L Datasheet Page 3
RN1110(T5L Datasheet Page 4
RN1110(T5L Datasheet Page 5
RN1110(T5L Datasheet Page 6

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RN1110CT(TPL3) RN1110CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3 487

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URL Link

RN1110(T5L,F,T)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SSM

RN1110CT(TPL3)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

20V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

-

Power - Max

50mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3