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| Datasheet | RN2507(TE85L,F) |
| File Size | 317.79 KB |
| Total Pages | 6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RN2507(TE85L,F) |
| Description | TRANS 2PNP PREBIAS 0.3W SMV |
RN2507(TE85L,F) - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/RN2507(TE85L,F)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-74A, SOT-753 Supplier Device Package SMV |