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| Datasheet | RP1E090XNTCR |
| File Size | 457.83 KB |
| Total Pages | 7 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RP1E090XNTCR |
| Description | MOSFET N-CH 30V 9A MPT6 |
RP1E090XNTCR - Rohm Semiconductor
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RP1E090XNTCR | Rohm Semiconductor | MOSFET N-CH 30V 9A MPT6 | 371 More on Order |
URL Link
www.oemstron.com/datasheet/RP1E090XNTCR
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT6 Package / Case 6-SMD, Flat Leads |