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| Datasheet | RQ3E180GNTB |
| File Size | 2,609.2 KB |
| Total Pages | 12 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RQ3E180GNTB |
| Description | MOSFET N-CH 30V 18A 8-HSMT |
RQ3E180GNTB - Rohm Semiconductor
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RQ3E180GNTB | Rohm Semiconductor | MOSFET N-CH 30V 18A 8-HSMT | 198 More on Order |
URL Link
www.oemstron.com/datasheet/RQ3E180GNTB
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN |