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| Datasheet | RQA0002DNSTB-E |
| File Size | 183.74 KB |
| Total Pages | 18 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RQA0002DNSTB-E |
| Description | MOSFET N-CH HWSON2 |
RQA0002DNSTB-E - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/RQA0002DNSTB-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 15W (Tc) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package 2-HWSON (5x4) Package / Case 3-DFN Exposed Pad |