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| Datasheet | RSD200N10TL |
| File Size | 189.66 KB |
| Total Pages | 4 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RSD200N10TL |
| Description | MOSFET N-CH 100V 20A CPT3 |
RSD200N10TL - Rohm Semiconductor
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RSD200N10TL | Rohm Semiconductor | MOSFET N-CH 100V 20A CPT3 | 408 More on Order |
URL Link
www.oemstron.com/datasheet/RSD200N10TL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 48.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |